Download e-book for kindle: Defects in microelectronic materials and devices by Daniel M. Fleetwood, Ronald D. Schrimpf

By Daniel M. Fleetwood, Ronald D. Schrimpf

ISBN-10: 1420043765

ISBN-13: 9781420043761

Uncover the Defects that Compromise functionality and Reliability
As microelectronics gains and units turn into smaller and extra complicated, it's severe that engineers and technologists thoroughly know the way elements will be broken through the more and more advanced fabrication strategies required to provide them.

A accomplished survey of defects that take place in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) applied sciences, this ebook additionally discusses flaws in linear bipolar applied sciences, silicon carbide-based units, and gallium arsenide fabrics and units. those defects can profoundly impact the yield, functionality, long term reliability, and radiation reaction of microelectronic units and built-in circuits (ICs). Organizing the cloth to construct knowing of the issues and supply a brief reference for scientists, engineers and technologists, this article reports yield- and performance-limiting defects and impurities within the equipment silicon layer, within the gate insulator, and/or on the serious Si/SiO2 interface. It then examines defects that effect creation yield and long term reliability, including:

  • Vacancies, interstitials, and impurities (especially hydrogen)
  • Negative bias temperature instabilities
  • Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive method
The authors condense many years of expertise and views of famous experimentalists and theorists to symbolize illness houses and their effect on microelectronic units. They establish the defects, delivering recommendations to prevent them and strategies to realize them. those comprise using three-D imaging, in addition to electric, analytical, computational, spectroscopic, and cutting-edge microscopic equipment. This booklet is a worthwhile examine demanding situations to return from rising fabrics, reminiscent of high-K gate dielectrics and high-mobility substrates being built to interchange Si02 because the most well liked gate dielectric fabric, and high-mobility substrates.

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Defects in microelectronic materials and devices by Daniel M. Fleetwood, Ronald D. Schrimpf PDF

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Extra resources for Defects in microelectronic materials and devices

Sample text

13 Trapped interstitial density as a function of fRTP anneal temperature for a 1 Â 1015 cmÀ2, 30 keV Ge amorphizing implant. ß 2008 by Taylor & Francis Group, LLC. to isochronal anneals, which affects EOR defects at different stages in their evolution, conventional kinetic analyses methods in which specific defect structures are isolated cannot be employed to determine the rate of interstitial loss for single isolated defect structures. Rather the interstitial loss data for the duration of the flash anneal over differing defect structures is obtained.

30. J. , Implantation and transient B diffusion in Si: The source of the interstitials, Appl. Phys. , 65, 2305, 1994. 31. Z. , Microstructural evolution of {113} rod-like defects and {111} dislocation loops in silicon-implanted silicon, Appl. Phys. , 71, 659, 1997. 32. A. , Defects in electron-irradiated germanium, Phil. Mag. A, 34, 1057, 1976. 33. G. , {113} Loops in electron-irradiated silicon, Phil. Mag. A, 39, 317, 1979. 34. S. , A systematic analysis of defects in ion implanted silicon, Appl.

8 Hydrogen in Germanium ................................................................................................. 1 Hydrogen Incorporation, Diffusivity, and Solubility in Ge ............................. 2 Isolated Hydrogen Species and Complexes with Intrinsic Defects in Ge ...... 3 Hydrogen Passivation of Deep Centers and Activation of Neutral Impurities in Ge ................................................................................... 4 Device-Related Aspects of Hydrogen in Ge .......................................................

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Defects in microelectronic materials and devices by Daniel M. Fleetwood, Ronald D. Schrimpf


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